INTRINSIC CARRIER CONCENTRATION OF HG_1-XCD_XTENEMIROVSKY Y; FINKMAN E.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 12; PP. 8107-8111; BIBL. 13 REF.Article

MEASUREMENT OF DIFFERENTIAL CAPACITANCE IN SOLUTIONS OF LOW CONDUCTIVITYARIEL M; NEMIROVSKY Y.1972; ELECTROCHIM. ACTA; G.B.; DA. 1972; VOL. 17; NO 11; PP. 1977-1986; ABS. FR. ALLEM.; BIBL. 8 REF.Serial Issue

INFRARED OPTICAL ABSORPTION OF HG_1-XCD_XTEFINKMAN E; NEMIROVSKY Y.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 6; PP. 4356-4361; BIBL. 16 REF.Article

DIFFUSION OF INDIUM IN HG_1-XCD_XTEMARGALIT S; NEMIROVSKY Y.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 6; PP. 1406-1408; BIBL. 9 REF.Article

N-CHANNEL INSULATED-GATE FIELD-EFFECT TRANSISTORS IN HG_1-XCD_XTE WITH X=0.215NEMIROVSKY Y; MARGALIT S; KIDRON I et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 6; PP. 466-468; BIBL. 7 REF.Article

Bulk lifetime determination of etch-thinned INSb wafers for two-dimensional infrared focal plane arrayBLOOM, I; NEMIROVSKY, Y.I.E.E.E. transactions on electron devices. 1992, Vol 39, Num 4, pp 809-812, issn 0018-9383Article

Measurement and modeling of the fast collapse of HgCdTe metal-insulator-semiconductor devicesMEYASSED, M; NEMIROVSKY, Y.Applied physics letters. 1991, Vol 59, Num 19, pp 2439-2441, issn 0003-6951Article

Surface passivation and 1/f noise phenomena in HgCdTe photodiodesNEMIROVSKY, Y; ROSENFELD, D.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1990, Vol 8, Num 2, pp 1159-1166, issn 0734-2101Article

Electrical properties of shallow levels in p-type HgCdTeFINKMAN, E; NEMIROVSKY, Y.Journal of applied physics. 1986, Vol 59, Num 4, pp 1205-1211, issn 0021-8979Article

The cutoff wavelength and minority-carrier lifetime in implanted n⁺-on-bulk p Hg_1-xCd_xTe photodiodesNEMIROVSKY, Y; ROSENFELD, D.Journal of applied physics. 1988, Vol 63, Num 7, pp 2435-2439, issn 0021-8979Article

Open-tube vapor transport epitaxy of Hg_1-xCd_xTeNEMIROVSKY, Y; KEPTEN, A.Journal of electronic materials. 1984, Vol 13, Num 6, pp 867-895, issn 0361-5235Article

Trap-assisted tunneling in mercury cadmium telluride photodiodesUNIKOVSKY, A; NEMIROVSKY, Y.Applied physics letters. 1992, Vol 61, Num 3, pp 330-332, issn 0003-6951Article

Thermal noise in buried-channel MOSFETGOLDMINZ, L; NEMIROVSKY, Y.I.E.E.E. transactions on electron devices. 1992, Vol 39, Num 10, pp 2325-2332, issn 0018-9383Article

A modified and systematic approach to noise equivalent temperature difference derivation for infrared focal plane arraysHAIT, Y; NEMIROVSKY, Y.Infrared physics. 1990, Vol 30, Num 1, pp 71-83, issn 0020-0891Article

Transient and steady-state excess carrier lifetimes in p-type HgCdTeFASTOW, R; NEMIROVSKY, Y.Applied physics letters. 1989, Vol 55, Num 18, pp 1882-1884, issn 0003-6951Article

Surface passivation of backside-illuminated indium antimonide focal plane arrayBLOOM, I; NEMIROVSKY, Y.I.E.E.E. transactions on electron devices. 1993, Vol 40, Num 2, pp 309-314, issn 0018-9383Article

The excess carrier lifetime in vacancy- and impurity-doped HgCdTeFASTOW, R; NEMIROVSKY, Y.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1990, Vol 8, Num 2, pp 1245-1250, issn 0734-2101Article

Comparison of NETD performance of staring and partial-scanning infrared focal plane arraysHAIT, Y; NEMIROVSKY, Y.Infrared physics. 1989, Vol 29, Num 6, pp 971-984, issn 0020-0891, 14 p.Article

Tunneling currents in reverse biased Hg_1-x Cd_xTe photodiodesNEMIROVSKY, Y; BLOOM, I.Infrared physics. 1987, Vol 27, Num 3, pp 143-151, issn 0020-0891Article

Calibration curve for the cut-off wavelength of photodiodes in Hg_1-xCd_xTe epilayersSAND, E; NEMIROVSKY, Y.Infrared physics. 1985, Vol 25, Num 3, pp 591-594, issn 0020-0891Article

Photocurrent in CdTe NIP solar cellsGOREN, D; ASA, G; NEMIROVSKY, Y et al.Solar energy materials and solar cells. 2000, Vol 60, Num 4, pp 367-377, issn 0927-0248Article

The noise equivalent temperature difference performance of HgCdTe photodiode arrayLUBZENS, D; ROSENFELD, D; NEMIROVSKY, Y et al.Infrared physics. 1988, Vol 28, Num 6, pp 417-423, issn 0020-0891Article

GROWTH AND PROPERTIES OF HG_1-XCD_XTE EPITAXIAL LAYERSNEMIROVSKY Y; MARGALIT S; FINKMAN E et al.1982; JOURNAL OF ELECTRONIC MATERIALS; ISSN 0361-5235; USA; DA. 1982; VOL. 11; NO 1; PP. 133-153; BIBL. 15 REF.Article

Enhancement of porous silicon photoluminescence by NF₃/UV photo-thermal surface treatmentSTOLYAROVA, S; EI-BAHAR, A; NEMIROVSKY, Y et al.Journal of physics. D, Applied physics (Print). 2000, Vol 33, Num 17, pp L90-L92, issn 0022-3727Article

The stability of electrical parameters of CdTe layers produced by metal-organic chemical vapour depositionLISIANSKY, M; KORCHNOI, V; NEMIROVSKY, Y et al.Journal of physics. D, Applied physics (Print). 1997, Vol 30, Num 23, pp 3203-3210, issn 0022-3727Article